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LPV511 Datasheet(PDF) 3 Page - Texas Instruments |
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LPV511 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 21 page  LPV511 www.ti.com SNOSAG7C – AUGUST 2005 – REVISED MARCH 2013 3V Electrical Characteristics (1) Unless otherwise specified, all limits are specified for TJ = 25°C, V + = 3V, V− = 0V, V CM = VO = V +/2, and R L = 100 kΩ to V +/2 . Boldface limits apply to the temperature range of −40°C to 85°C. Symbol Parameter Conditions Min Typ Max Units (2) (3) (2) VOS Input Offset Voltage ±0.2 ±3 mV ±3.8 TC VOS Input Offset Voltage Drift See(4) ±0.3 ±15 μV/°C IB Input Bias Current(5) VCM = 0.5V −1000 −320 –1600 pA VCM = 2.5V 110 800 1900 IOS Input Offset Current ±10 pA CMRR Common Mode Rejection Ratio VCM Stepped from 0V to 1.5V 77 100 70 VCM Stepped from 2.4V to 3V 75 115 dB 68 VCM Stepped from 0.5V to 2.5V 60 80 56 PSRR Power Supply Rejection Ratio V+ = 2.7V to 5V, VCM = 0.5V 72 114 68 V+ = 3V to 5V, VCM = 0.5V 76 115 dB 72 V+ = 5V to 12V, VCM = 0.5V 84 117 80 CMVR Input Common-Mode Voltage CMRR ≥ 50 dB −0.1 3.1 V Range 0 3.0 AVOL Large Signal Voltage Gain Sinking, VO = 2.5V 75 105 dB 70 Sourcing, VO = 0.5V VO Output Swing High VID = 100 mV 2.85 2.90 V 2.8 Output Swing Low VID = −100 mV 100 150 mV 200 ISC Output Short Circuit Current(6) Sourcing −500 −225 VID = 100 mV µA Sinking 225 1350 VID = −100 mV IS Supply Current 0.88 1.2 µA 1.5 SR Slew Rate(7) AV = +1, VO ramps from 0.5V to 2.5V 5.25 7.7 V/ms 3.10 GBW Gain Bandwidth Product RL = 1 MΩ, CL= 50 pF 27 kHz Phase Margin RL = 1 MΩ, CL= 50 pF 53 deg en Input-Referred Voltage Noise f = 100 Hz 320 nV/ √Hz in Input-Referred Current Noise f = 10 Hz .02 pA/ √Hz f = 1 kHz .01 (1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device. (2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method. (3) Typical values represent the most likely parametric norm at the time of characterization. (4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change. (5) Positive current corresponds to current flowing into the device. (6) The Short Circuit Test is a momentary test. See Note 4 in the Absolute Maximum Ratings Table. (7) Slew rate is the average of the rising and falling slew rates. Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LPV511 |
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