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BUK7Y53-100B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK7Y53-100B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK7Y53-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 13 October 2010 9 of 14 NXP Semiconductors BUK7Y53-100B N-channel TrenchMOS standard level FET Fig 14. Gate-source voltage as a function of gate charge; typical values. Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 003aad635 0 2 4 6 8 10 0 6 12 18 24 QG (nC) VGS (V) VDS = 80 V VDS = 14 V 003aad636 10 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aad634 0 5 10 15 20 25 0 0.4 0.8 1.2 VSD (V) IS (A) 25 °C Tj = 175 °C |
Similar Part No. - BUK7Y53-100B_15 |
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Similar Description - BUK7Y53-100B_15 |
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