2SC5027E

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-030.D



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

750

V

Collector-Emitter Voltage

700

V

Collector-Emitter Voltage

7

V

Peak Collector Current

3

A

Collector Current (Pulse)

10

A

Base Current

1.5

A

TO-220/TO-220F

50

Power Dissipation

TO-220F/TO-220F1

TO-220F2

40

W

Junction Temperature

150

°C

Storage Temperature

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

750

V

Collector-Emitter Breakdown Voltage

700

V

Emitter-Base Breakdown Voltage

7

V

Collector-Emitter sustaining Voltage

L=2mH, Clamped

700

V

Collector Cut-off Current

10

μA

Emitter Cut-off Current

10

μA

10

40

DC Current Gain

8

Collector-Emitter Saturation Voltage

2

V

Base-Emitter Saturation Voltage

1.5

V

Output Capacitance

60

pF

Current Gain Bandwidth Product

15

MHz

Turn ON Time

0.5

μs

Storage Time

3

μs

Fall Time

0.3

μs



CLASSIFICATION

N

R

O

RANGE

10 ~ 20

15 ~ 30

20 ~ 40