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2SC5027EL-X-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SC5027EL-X-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC5027E NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R203-030.D ABSOLUATE MAXIUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 750 V Collector-Emitter Voltage VCEO 700 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A TO-220/TO-220F 50 Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 40 W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 750 V Collector-Emitter Breakdown Voltage BVCEO IC=5mA, IB=0 700 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 V Collector-Emitter sustaining Voltage VCEO(SUS) IC=1.5A, IB1= -IB2=0.3A L=2mH, Clamped 700 V Collector Cut-off Current ICBO VCB=750V, IE=0 10 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 10 μA hFE1 VCE=5V, IC=0.2A 10 40 DC Current Gain hFE 2 VCE=5V, IC=1A 8 Collector-Emitter Saturation Voltage VCE (SAT) IC=1.5A, IB=0.3A 2 V Base-Emitter Saturation Voltage VBE (SAT) IC=1.5A, IB=0.3A 1.5 V Output Capacitance COB VCB=10V, f=1MHz, IE=0 60 pF Current Gain Bandwidth Product fT VCE=10V, IC=0.2A 15 MHz Turn ON Time tON 0.5 μs Storage Time tS 3 μs Fall Time tF VCC=400V IC=5IB1= -2.5IB2=2A RL=200Ω 0.3 μs CLASSIFICATION of hFE1 CLASSIFICATION N R O RANGE 10 ~ 20 15 ~ 30 20 ~ 40 |
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