5303D

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R223-004.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

700

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

10

V

Collector Current

2

A

Collector Peak Current (tp<5ms)

4

A

Base Current

1

A

Base Peak Current (tp<5ms)

2

A

25

W

Maximum Operating Junction Temperature

+150

°С

Storage Temperature Range

-65~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°С/W

Junction to Case

6.25

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Voltage

700

V

Collector-Emitter Breakdown Voltage (Note)

400

V

Emitter-Base Breakdown Voltage

10

V

Collector Cutoff Current

1

µA

Emitter Cutoff Current

1

µA

ON CHARACTERISTICS

10

10

30

DC Current Gain

5

0.5

V

Collector-Emitter Saturation Voltage (Note)

1.1

1.5

V

1.1

V

Base-Emitter Saturation Voltage (Note)

1.2

V

SWITCHING CHARACTERISTICS

Turn On Time

0.15

0.3

µS

Storage Time

0.5

0.9

µS

Fall Time

Cycle<1%

0.2

0.4

µS

Diode

Forward Voltage Drop

1.4

V

Fall Time

800

µS

Note: Pulsed duration = 300µS, duty cycle ≤2%