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5303D Datasheet(PDF) 2 Page - Unisonic Technologies |
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5303D Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 5303D Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R223-004.a ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp<5ms) IBM 2 A Collector Dissipation (TC≤25°С) PC 25 W Maximum Operating Junction Temperature TJ +150 °С Storage Temperature Range TSTG -65~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 °С/W Junction to Case θJC 6.25 °С/W ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Voltage BVCBO IC = 1mA, IB = 0 700 V Collector-Emitter Breakdown Voltage (Note) BVCEO IC = 10mA, IE = 0 400 V Emitter-Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 10 V Collector Cutoff Current ICBO VCB = 700V, IE = 0 1 µA Emitter Cutoff Current IEBO VEB = 9V, IC = 0 1 µA ON CHARACTERISTICS hFE1 VCE =5V, IC =10mA 10 hFE2 VCE =5V, IC =400mA 10 30 DC Current Gain hFE3 VCE =5V, IC =1A 5 VCE(SAT1) IC =0.5A, IB =0.1A 0.5 V Collector-Emitter Saturation Voltage (Note) VCE(SAT2) IC =1A, IB =0.25A 1.1 1.5 V VBE(SAT) IC =0.5A, IB =0.1A 1.1 V Base-Emitter Saturation Voltage (Note) VBE(SAT2) IC =1A, IB =0.25A 1.2 V SWITCHING CHARACTERISTICS Turn On Time tON 0.15 0.3 µS Storage Time tSTG 0.5 0.9 µS Fall Time tF VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% 0.2 0.4 µS Diode Forward Voltage Drop VF IC =1A 1.4 V Fall Time tF IC =1A 800 µS Note: Pulsed duration = 300µS, duty cycle ≤2% |
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