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5302DL-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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5302DL-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 5302D NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R213-018. H ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tP<5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tP<5ms) IBM 2 A TO-126 12.5 TO-92 1.6 TO-251/ TO-252 25 Power Dissipation (TC≤25°С) SOT-223 PD 1 W Junction Temperature TJ +150 °С Storage Temperature TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-126 122 TO-92 160 TO-251/ TO-252 100 Junction to Ambient SOT-223 θJA 175 °С/W TO-126 10 TO-92 80 TO-251/ TO-252 5 Junction to Case SOT-223 θJC 125 °С/W ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IE=0 (Note) 400 V Collector-Base Breakdown Voltage BVCBO IC=1mA, IB=0 800 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 10 V Collector Cutoff Current ICBO VCB=800V, IE=0 1 μA Emitter Cutoff Current IEBO VEB=9V, IC=0 1 μA ON CHARACTERISTICS hFE1 VCE=5V, IC=10mA 10 hFE2 VCE=5V, IC=400mA 10 40 DC Current Gain hFE3 VCE=5V, IC=1A 5 VCE(SAT1) IC=0.5A, IB=0.1A (Note) 0.5 Collector-Emitter Saturation Voltage VCE(SAT2) IC=1A, IB=0.25A (Note) 1.1 1.5 V VBE(SAT1) IC=0.5A, IB=0.1A (Note) 1.1 Base-Emitter Saturation Voltage VBE(SAT2) IC=1A, IB=0.25A (Note) 1.2 V SWITCHING CHARACTERISTICS Turn On Time tON 0.15 0.3 μS Fall Time tF 0.2 0.4 μS Storage Time tSTG VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS Duty Cycle<1% 0.5 0.9 μS DIODE Forward Voltage Drop VF IC=1A 1.4 V Fall Time tF IC=1A 800 μS Note: Pulsed duration = 300μS, Duty cycle≤2% |
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