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MJE13001G-X-T92-A-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE13001G-X-T92-A-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page MJE13001 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-055.I ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 600 V Emitter Base Voltage VEBO 7 V Collector Current IC 200 mA Collector Power Dissipation SOT-89 PC 550 mW TO-92 750 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 600 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 400 V Emitter-Base Breakdown Voltage BVEBO IE=100μA, IC=0 7 V Base-Emitter Voltage VBE IE=100 mA 1.1 V Collector Cutoff Cut-Off Current ICBO VCB=600V, IE=0A 100 μA Collector Emitter Cut-Off Current ICEO VCE=400V, IB=0 200 μA Emitter Cutoff Cut-Off Current IEBO VEB=7V, IC=0A 100 μA ON CHARACTERISTICS DC Current Gain hFE1* VCE=20 V, IC=20mA 10 70 hFE2 VCE=10V, IC=0.25mA 5 Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=10mA 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=10mA 1.2 V SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT IC=20mA,VCE=20V,f=1MHz 8 MHz Resistive Load Storage Time tS IC=50mA, IB1=-IB2=5mA, VCC=45V 1.5 μs Fall Time tF 0.3 μs CLASSIFICATION OF hFE1* RANK A B C D E F G H I J K L RANGE 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70 |
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