BUK6507-75C

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Product data sheet

Rev. 02 — 4 October 2010

7 of 14

NXP Semiconductors

BUK6507-75C

N-channel TrenchMOS FET

Source-drain diode

source-drain voltage

see Figure 16

-0.8

1.2

V

reverse recovery time

-54

-

ns

recovered charge

-

129

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aae546

0

30

60

90

120

150

020

40

60

80

(S)

003aae547

0

40

80

120

160

01

23

(A)

3.8

4.0

4.5

5

3.2

3.4

3.6

003aae548

0

40

80

120

160

01

23

45

(A)

003aae549

0

4

8

12

16

20

02

46

8

10

(m

Ω)