BUK764R0-75C

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 2 — 26 April 2011

3 of 13

NXP Semiconductors

BUK764R0-75C

N-channel TrenchMOS standard level FET

4.

Limiting values

[1]

Refer to document 9397 750 12572 for further information.

[2]

Continuous current is limited by package.

[3]

Current is limited by power dissipation chip rating.

[4]

Maximum value not quoted. Repetitive rating defined in avalanche rating figure.

[5]

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[6]

Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[7]

Refer to application note AN10273 for further information.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

75

V

drain-gate voltage

-75

V

gate-source voltage

-20

20

V

drain current

see Figure 4

[1][2] -

100

A

[1][3] -

199

A

[1][2] -

100

A

peak drain current

see Figure 4

-

797

A

total power dissipation

-

333

W

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

[3][1] -

199

A

[3][2] -

100

A

peak source current

-

797

A

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

-

630

mJ

repetitive drain-source

avalanche energy

see Figure 3

[4][5]

[6][7]

--J