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BUK764R0-75C Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK764R0-75C Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page BUK764R0-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 26 April 2011 3 of 13 NXP Semiconductors BUK764R0-75C N-channel TrenchMOS standard level FET 4. Limiting values [1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package. [3] Current is limited by power dissipation chip rating. [4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [6] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [7] Refer to application note AN10273 for further information. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V VDGR drain-gate voltage RGS =20kΩ -75 V VGS gate-source voltage -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1; see Figure 4 [1][2] - 100 A [1][3] - 199 A Tmb =100 °C; VGS = 10 V; see Figure 1 [1][2] - 100 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 4 - 797 A Ptot total power dissipation Tmb =25°C; see Figure 2 - 333 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C [3][1] - 199 A [3][2] - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 797 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =100 A; Vsup ≤ 75 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped - 630 mJ EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [4][5] [6][7] --J |
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