BUK724R5-30C

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Product data sheet

Rev. 01 — 1 July 2010

3 of 14

NXP Semiconductors

BUK724R5-30C

N-channel TrenchMOS standard level FET

4.

Limiting values

[1]

Current is limited by power dissipation chip rating.

[2]

Continuous current is limited by package.

[3]

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[4]

Repetitive avalanche rating limited by average junction temperature of 170 °C.

[5]

Refer to application note AN10273 for further information.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

--30

V

drain-gate voltage

--30

V

gate-source voltage

-20

-

20

V

drain current

see Figure 4

[1]

-

-

136

A

--75

A

[2]

--75

A

peak drain current

see Figure 4

-

-

543

A

total power dissipation

-

-

157

W

storage temperature

-55

-

175

°C

junction temperature

-55

-

175

°C

Source-drain diode

source current

[2]

--75

A

[1]

-

-

136

A

peak source current

-

-

543

A

Avalanche ruggedness

non-repetitive

drain-source

avalanche energy

-

-

329

mJ

repetitive drain-source

avalanche energy

see Figure 3

[3][4][5]

---J