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BUK663R2-40C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK663R2-40C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK663R2-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 14 October 2010 6 of 14 NXP Semiconductors BUK663R2-40C N-channel TrenchMOS intermediate level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 40 --V ID =250 µA; VGS =0V; Tj = -55 °C 36 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9; see Figure 10 1.8 2.3 2.8 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --3.3 V ID =2.5 mA; VDS =VGS; Tj = 175 °C; see Figure 10 0.8 --V IDSS drain leakage current VDS =40V; VGS =0V; Tj = 175 °C - - 500 µA VDS =40V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VDS =0V; VGS =20V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C; see Figure 11 -2.7 3.2 mΩ VGS =5V; ID =25A; Tj =25 °C; see Figure 11 -3.8 4.8 mΩ VGS =4.5 V; ID =25A; Tj =25°C; see Figure 11 -4.3 5.7 mΩ VGS =10V; ID =25A; Tj = 175 °C; see Figure 12; see Figure 11 --6.7 mΩ Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; see Figure 13; see Figure 14 - 125 - nC ID =25A; VDS =32V; VGS =5V; see Figure 13; see Figure 14 -71 - nC QGS gate-source charge ID =25A; VDS =32V; VGS =10V; see Figure 13; see Figure 14 -23 - nC QGD gate-drain charge - 42 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 6016 8020 pF Coss output capacitance - 739 870 pF Crss reverse transfer capacitance - 510 700 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω -40 - ns tr rise time - 87 - ns td(off) turn-off delay time - 224 - ns tf fall time -117 -ns LD internal drain inductance from upper edge of drain mounting base to centre of die; Tj =25°C -3.5 -nH LS internal source inductance from source lead to source bond pad; Tj =25°C -7.5 -nH |
Similar Part No. - BUK663R2-40C_15 |
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Similar Description - BUK663R2-40C_15 |
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