BUK662R5-30C

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Product data sheet

Rev. 2 — 14 October 2010

8 of 14

NXP Semiconductors

BUK662R5-30C

N-channel TrenchMOS intermediate level FET

Fig 9.

Sub-threshold drain current as a function of

gate-source voltage

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Drain-source on-state resistance as a function

of drain current; typical values

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aad806

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

01

23

4

(A)

max

typ

min

003aae542

0

1

2

3

4

-60

0

60

120

180

°C)

(V)

max @1mA

typ @1mA

min @2.5mA

003aae782

0

2

4

6

8

10

0

60

120

180

240

(m

Ω)

10.0

6.0

4.5

3.8

5.0

4.0

03aa27

0

0.5

1

1.5

2

−60

0

60

120

180

°C)

a