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BUK9Y104-100B Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BUK9Y104-100B
Description  N-channel TrenchMOS logic level FET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK9Y104-100B Datasheet(HTML) 6 Page - NXP Semiconductors

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BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 April 2010
6 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =0.25mA; VGS =0V; Tj = 25 °C
100
-
-
V
ID =0.25mA; VGS =0V; Tj = -55 °C
90
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj =25°C;
see Figure 9; see Figure 10
1.25
1.65
2.15
V
VGSth
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj = 175 °C;
see Figure 9; see Figure 10
0.5
--V
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 9; see Figure 10
--2.45
V
IDSS
drain leakage current
VDS =100 V; VGS =0V; Tj = 25 °C
-
0.02
1
µA
IGSS
gate leakage current
VDS =0V; VGS =15V; Tj = 25 °C
-
2
100
nA
VDS =0V; VGS =-15 V; Tj = 25 °C
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =5A; Tj = 25 °C
-
86
99
m
VGS =5V; ID =5A; Tj =175 °C;
see Figure 11
-
-
270
m
VGS =4.5 V; ID =5A; Tj = 25 °C
-
-
107
m
VGS =5V; ID =5A; Tj =25 °C;
see Figure 11; see Figure 12
-
91
104
m
IDSS
drain leakage current
VDS =100 V; VGS =0V; Tj = 175 °C
-
-
500
µA
Dynamic characteristics
QG(tot)
total gate charge
ID =5A; VDS =80V; VGS =5V;
see Figure 13
-11
-
nC
QGS
gate-source charge
-
1.7
-
nC
QGD
gate-drain charge
-
4.7
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25°C; see Figure 14
-
854
1139
pF
Coss
output capacitance
-
87
105
pF
Crss
reverse transfer
capacitance
-
4258pF
td(on)
turn-on delay time
VDS =30V; RL =6 Ω; VGS =5V;
RG(ext) =10 Ω
-15
-
ns
tr
rise time
-
8
-
ns
td(off)
turn-off delay time
-
36
-
ns
tf
fall time
-6
-ns
Source-drain diode
VSD
source-drain voltage
IS =5A; VGS =0V; Tj =25°C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = -100 A/µs; VGS =0V;
VDS =30V
-79
-
ns
Qr
recovered charge
-
190
-
nC


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