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BUK9Y104-100B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9Y104-100B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 6 of 14 NXP Semiconductors BUK9Y104-100B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 100 - - V ID =0.25mA; VGS =0V; Tj = -55 °C 90 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9; see Figure 10 1.25 1.65 2.15 V VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 9; see Figure 10 0.5 --V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 9; see Figure 10 --2.45 V IDSS drain leakage current VDS =100 V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VDS =0V; VGS =15V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-15 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =5A; Tj = 25 °C - 86 99 m Ω VGS =5V; ID =5A; Tj =175 °C; see Figure 11 - - 270 m Ω VGS =4.5 V; ID =5A; Tj = 25 °C - - 107 m Ω VGS =5V; ID =5A; Tj =25 °C; see Figure 11; see Figure 12 - 91 104 m Ω IDSS drain leakage current VDS =100 V; VGS =0V; Tj = 175 °C - - 500 µA Dynamic characteristics QG(tot) total gate charge ID =5A; VDS =80V; VGS =5V; see Figure 13 -11 - nC QGS gate-source charge - 1.7 - nC QGD gate-drain charge - 4.7 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 854 1139 pF Coss output capacitance - 87 105 pF Crss reverse transfer capacitance - 4258pF td(on) turn-on delay time VDS =30V; RL =6 Ω; VGS =5V; RG(ext) =10 Ω -15 - ns tr rise time - 8 - ns td(off) turn-off delay time - 36 - ns tf fall time -6 -ns Source-drain diode VSD source-drain voltage IS =5A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =30V -79 - ns Qr recovered charge - 190 - nC |
Similar Part No. - BUK9Y104-100B_15 |
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Similar Description - BUK9Y104-100B_15 |
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