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BUK9Y12-55B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK9Y12-55B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK9Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 9 of 14 NXP Semiconductors BUK9Y12-55B N-channel TrenchMOS logic level FET Fig 14. Gate-source voltage as a function of gate charge; typical values. Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 003aac882 0 1 2 3 4 5 010 20 30 40 QG (nC) VGS (V) VDS = 44V VDS = 14V 003aac884 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aac883 0 20 40 60 0 0.2 0.4 0.6 0.8 1 VSD (V) IS (A) Tj = 25 °C Tj = 175 °C |
Similar Part No. - BUK9Y12-55B_15 |
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Similar Description - BUK9Y12-55B_15 |
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