MMBTA94G-AE3-R datasheet(2/3 Pages) UTC

Part #	MMBTA94G-AE3-R

Description	HIGH VOLTAGE TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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MMBTA94

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-008.F



ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

IC

-300

mA

Collector Dissipation (Ta=25

C)

PC

350

mW

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-40~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = -100µA, IE=0

-400

V

Collector-Emitter Breakdown Voltage

BVCEO

IC = -1mA, IB=0

-400

V

Collector-Emitter Breakdown Voltage

BVCES

IC = -100µA,VBE=0

-400

V

Emitter-Base Breakdown Voltage

BVEBO

IE= -100µA, IC=0

-5

V

Collector Cut-off Current

ICBO

VCB= -300V, IE=0

-100

nA

Collector Cut-off Current

ICES

VCB= -400V, VBE=0

-1

µA

Emitter Cut-off Current

IEBO

VEB= -4V, IC=0

100

nA

DC Current Gain (Note)

hFE

VCE= -10V, IC= -1mA

60

VCE= -10V, IC= -10mA

70

300

VCE= -10V, IC= -50mA

70

VCE= -10V, IC= -100mA

40

Collector-Emitter Saturation Voltage

VCE(SAT)

IC= -10mA, IB= -1mA

-0.20

V

IC= -50mA, IB= -5mA

-0.5

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC= -10mA, IB= -1mA

-0.75

V

Output Capacitance

Cob

VCB= -20V,IE=0, f =1MHz

7

pF

Note: Pulse test: PW

<300µs, Duty Cycle<2%

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