TUL1102

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R203-034.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

1100

V

450

V

12

V

Collector Current

4

A

8

A

Base Current

2

A

4

A

Power Dissipation

TO-220/TO-263

70

W

TO-220F1

30

TO-251/TO-252

45

Junction Temperature

+150

°C

Storage Temperature

-65 ~ +150

°C

Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.

Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

TO-220/TO-263

1.78

°C/W

TO-220F1

4.2

TO-251/TO-252

2.78



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-off Current

100

µA

Emitter Cut-off Current

1

mA

Collector-Emitter Sustaining Voltage

450

V

Collector-Emitter Saturation Voltage

1.5

V

Base-Emitter Saturation Voltage

1.5

V

DC Current Gain (Note)

35

12

70

20

Resistive Load

Storage Time

2.5

µs

Fall Time

300

ns

Avalanche Energy

L = 2mH, C = 1.8nF

6

mJ

Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %