MJE13009-P

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 9

www.unisonic.com.tw

QW-R223-008, A

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

700

V

Emitter Base Voltage

9

V

Collector Current

Continuous

12

A

Peak (Note 3)

24

Base Current

Continuous

6

A

Peak (Note 3)

12

Emitter Current

Continuous

18

A

Peak (Note 3)

36

Power Dissipation

TO-220

2

W

TO-3P

80

Derate above 25°C

TO-220

16

mW/°C

TO-3P

640

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

54

°C/W

TO-3P

21

Junction to Case

TO-220

4

°C/W

TO-3P

1.55

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector- Emitter Sustaining Voltage

400

V

Collector Cutoff Current

1

5

mA

Emitter Cutoff Current

1

mA

ON CHARACTERISTICS

(Note)

DC Current Gain

40

30

Current-Emitter Saturation Voltage

1

V

1.5

V

3

V

2

V

Base-Emitter Saturation Voltage

1.2

V

1.6

V

1.5

V