MJE13003KL-X-X-T92-B datasheet(3/8 Pages) UTC

Part #	MJE13003KL-X-X-T92-B

Description	NPN SILICON POWER TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 8 page

MJE13003K

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R223-006,A

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note)

Collector-Emitter Sustaining Voltage

IC=10 mA , IB=0

400

V

TC=25°C

1

Collector Cutoff Current

TC=100°C

ICEO

VCEO=Rated Value,

VBE(OFF)=1.5 V

5

mA

Emitter Cutoff Current

IEBO

VEB=9 V, IC=0

1

mA

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Figure 5

Clamped Inductive SOA with base reverse biased

RBSOA

See Figure 6

ON CHARACTERISTICS (Note)

hFE1

IC=0.5A, VCE=5V

8

51

DC Current Gain

hFE2

IC=1A, VCE=2V

5

30

IC=0.5A, IB=0.1A

0.5

IC=1A, IB=0.25A

1

IC=1.5A, IB=0.5A

3

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.25A, TC=100°C

1

V

IC=0.5A, IB=0.1A

1

IC=1A, IB=0.25A

1.2

Base-Emitter Saturation Voltage

VBE(SAT)

IC=1A, IB=0.25A, TC=100°C

1.1

V

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

fT

IC=100mA, VCE=10V, f=1MHz

4

10

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

21

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

tD

0.05 0.1

μs

Rise Time

tR

0.5

1

μs

Storage Time

tS

2

4

μs

Fall Time

tF

VCC=125V, IC=1A, IB1=IB2=0.2A,

tP=25μs, Duty Cycle≤1%

0.4

0.7

μs

Inductive Load, Clamped (Table 1)

Storage Time

tSTG

1.7

4

μs

Crossover Time

tC

0.29 0.75

μs

Fall Time

tF

IC=1A, Vclamp=300V, IB1=0.2A,

VBE(OFF)=5Vdc, TC=100°C

0.15

μs

Note: Pulse Test : PW=300μs, Duty Cycle≤2%

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