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MMDT8150 Datasheet(PDF) 2 Page - Unisonic Technologies |
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MMDT8150 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-017.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note 2) A Power Dissipation PD 200 (total) (Note 3) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10ms 3. 150mW per element must not be exceeded. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 32 V Emitter-Base Breakdown Voltage BVEBO IE=100µA, IC=0 6 V Collector Cut-Off Current ICBO VCB=30V, IE=0 0.5 µA Emitter Cut-Off Current IEBO VEB=6V, IC=0 0.5 µA Collector-Emitter Saturation Voltage (Note 1) VCE(SAT)1 IC=50mA, IB=2.5mA 40 60 mV VCE(SAT)2 IC=400mA, IB=20mA 0.2 0.3 V VCE(SAT)3 IC=800mA, IB=80mA 0.3 0.5 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=10mA 1 V DC Current Gain hFE1 VCE=1V, IC=100mA 180 560 hFE2 VCE=1V, IC=500mA 40 hFE3 VCE=2V, IC=50mA 82 Current Gain-Bandwidth Product fT VCE=5V, IC=50mA, f=100MHz 150 MHz Output Capacitance COBO VCB=10V, f=1MHz 15 pF Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% |
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