PZT1816

NPN PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R207-025.B



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

6

V

Collector Current

DC

4

A

PULSE(Note 2)

8

A

Power Dissipation

1

W

Junction Temperature

+150

C

Storage Temperature

-40 ~ +150

C

Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Base Breakdown Voltage

120

V

Collector Emitter Breakdown Voltage

100

V

Emitter Base Breakdown Voltage

6

V

Base-Emitter Saturation Voltage

0.9

1.2

V

Collector-Emitter Saturation Voltage

150

400

mV

Collector Cut-Off Current

1

μA

Emitter Cut-Off Current

1

μA

DC Current Transfer Ratio

70

400

40

Transition Frequency

180

MHz

Output Capacitance

40

pF

Turn-on Time

See test circuit

100

ns

Storage Time

See test circuit

900

ns

Fall Time

See test circuit

50

ns



RANK

R

S

T

Q

RANGE

100 - 200

140 - 280

200 - 400

70 -140