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PZT1816 Datasheet(PDF) 2 Page - Unisonic Technologies |
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PZT1816 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page PZT1816 NPN PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R207-025.B ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 4 A PULSE(Note 2) 8 A Power Dissipation PD 1 W Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Note2: Duty=1/2, Pw=20ms ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Base Breakdown Voltage BVCBO IC =10μA, IE =0 120 V Collector Emitter Breakdown Voltage BVCEO IC =1mA, RB=∞ 100 V Emitter Base Breakdown Voltage BVEBO IE =10μA, IC=0 6 V Base-Emitter Saturation Voltage VBE(SAT) IC = 2A, IB =0.2A 0.9 1.2 V Collector-Emitter Saturation Voltage VCE(SAT) IC = 2A, IB=0.2A 150 400 mV Collector Cut-Off Current ICBO VCB = 100 V, IE =0 1 μA Emitter Cut-Off Current IEBO VEB = 4V, IC=0 1 μA DC Current Transfer Ratio hFE1 VCE = 5V, IC = 0.5A 70 400 hFE2 VCE =5V, IC = 3A 40 Transition Frequency fT VCE =10V, IC =0.5A 180 MHz Output Capacitance Cob VCB =10V, IE =0A, f =1MHz 40 pF Turn-on Time tON See test circuit 100 ns Storage Time tSTG See test circuit 900 ns Fall Time tF See test circuit 50 ns CLASSIFICATION of hFE1 RANK R S T Q RANGE 100 - 200 140 - 280 200 - 400 70 -140 |
Similar Part No. - PZT1816_15 |
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Similar Description - PZT1816_15 |
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