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BUK7516-55A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7516-55A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BUK7516-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 26 January 2011 6 of 13 NXP Semiconductors BUK7516-55A N-channel TrenchMOS standard level FET Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 10. Gate-source voltage as a function of turn-on gate charge; typical values 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 03na35 0 10 20 30 0 20 40 60 80 100 ID (A) gfs (S) 03na31 0 20 40 60 80 100 024 68 10 VGS (V) ID (A) Tj = 175 °CTj = 25 °C 03na33 0 2 4 6 8 10 0 20 40 60 QG (nC) VGS (V) VDD = 44 V VDD = 14 V |
Similar Part No. - BUK7516-55A_15 |
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Similar Description - BUK7516-55A_15 |
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