IW4006B

Rev. 00

Symbol

Parameter

Value

Unit

DC Supply Voltage (Referenced to GND)

-0.5 to +20

V

DC Input Voltage (Referenced to GND)

V

DC Input Current, per Pin

±10

mA

Power Dissipation in Still Air, Plastic DIP, SOIC

Package

500**

mW

Power Dissipation per Output Transistor

100

mW

Tstg

Storage Temperature

-65 to +150

°C

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

260

°C

Functional operation should be restricted to the Recommended Operating Conditions.

**Derating: - Plastic DIP from -55 to +100

°C

- SOIC Package from -55 to +65

°C

- Plastic DIP: - 12 mW/

°C from +100 to +125°C

- SOIC Package: : - 7 mW/

°C from +65 to +125°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage (Referenced to GND)

3.0

18

V

DC Input Voltage (Referenced to GND)

0

V

Operating Temperature, All Package Types

-55

+125

°C

This device contains protection circuitry to guard against damage due to high static voltages or electric fields.

However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this

outputs must be left open.