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BUK9614-55A Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BUK9614-55A
Description  N-channel TrenchMOS logic level FET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK9614-55A Datasheet(HTML) 3 Page - NXP Semiconductors

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BUK9614-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 February 2011
3 of 14
NXP Semiconductors
BUK9614-55A
N-channel TrenchMOS logic level FET
4.
Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS =20 kΩ
-55
V
VGS
gate-source voltage
-10
10
V
ID
drain current
Tmb =25°C; VGS = 5 V; see Figure 1;
see Figure 3
-73
A
Tmb = 100 °C; VGS =5V; see Figure 1
-52
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
-
266
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
149
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
VGSM
peak gate-source voltage
pulsed; tp ≤ 50 µs
-15
15
V
Source-drain diode
IS
source current
Tmb =25°C
-
73
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
266
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID =73A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =5V; Tj(init) = 25 °C; unclamped
-
230
mJ
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Tmb (°C)
0
200
150
50
100
03aa24
40
80
120
Ider
(%)
0
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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