BUK9606-55B_4

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 04 — 23 July 2009

3 of 13

NXP Semiconductors

BUK9606-55B

N-channel TrenchMOS FET

4.

Limiting values

[1]

Current is limited by power dissipation chip rating.

[2]

Continuous current is limited by package.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

55

V

drain-gate voltage

-55

V

gate-source voltage

-15

15

V

drain current

[1]

-146

A

[2]

-75

A

[2]

-75

A

peak drain current

-587

A

total power dissipation

-258

W

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

[1]

-146

A

[2]

-75

A

peak source current

-

587

A

Avalanche ruggedness

non-repetitive

drain-source avalanche

energy

-679

mJ

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

03nh85

0

50

100

150

0

50

100

150

200

°C)

(A)

Capped at 75 A due to package

0

200

150

50

100

03aa16

40

80

120

(%)

0