Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com

201823B • Skyworks Proprietary information. • Products and product information are subject to change without notice. • August 15, 2013

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PRODUCT SUMMARY

SKY77752 SkyHi™ Dual-Band Power Amplifier Module for

CDMA2000 / WCDMA / HSDPA / HSUPA

Band II (1850–1910 MHz) Band V (824–849 MHz), LTE

APPLICATIONS

• WCDMA handsets

• HSDPA

• HSUPA

• CDMA2000

• EVDO

• LTE

Features

• Low voltage positive bias

supply: 3.2 V to 4.2 V

• Good linearity

• High efficiency

- Band II

47% at 28.3 dBm

- Band V

47% at 28.5 dBm

• Large dynamic range

• Small, low profile package

- 3 mm x 4 mm x 0.9 mm

- 16-pad configuration

• Power down control

• InGaP

• Supports low collector

voltage operation

• Digital Enable

• CMOS compatible control

signals

• Integrated Directional

Coupler

The SKY77752 SkyHi™ Power Amplifier Module (PAM) is a fully matched, 16-pad, surface mount

module developed for Code Division Multiple Access (CDMA) and Wideband Code Division Multiple

Access (WCDMA) applications. This small and efficient module packs full WCDMA Band II and Band V

coverage into a single compact package. The SKY77752 meets the stringent spectral linearity

requirements of WCDMA transmission, with high power added efficiency for power output to 28.8

dBm (Band II) and 28.2 dBm (Band V). The SKY77752 meets the stringent spectral linearity

requirements of High Speed Downlink Packet Access (HSDPA) data transmission with high power

added efficiency. A directional coupler is integrated into the module thus eliminating the need for any

external coupler.

The single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active

circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and interstage

matching circuits. Output match into a 50-ohm load is realized off-chip within the module package to

optimize efficiency and power performance.

The SKY77752 PAM is manufactured with Skyworks’ InGaP GaAs Heterojunction Bipolar Transistor

(HBT) BiFET process that provides for all positive voltage DC supply operation while maintaining high

efficiency and good linearity. No VREF voltage is required. Power down is accomplished by setting the

voltage on VEN_HB and VEN_LB to zero volts. No external supply side switch is needed as typical

“off” leakage is a few microamperes with full primary voltage supplied from the battery.

Figure 1. SKY77752 Functional Block Diagram