BUK9222-55A_15 datasheet(3/13 Pages) PHILIPS

Part #	BUK9222-55A

Description	N-channel TrenchMOS logic level FET

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BUK9222-55A

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Product data sheet

Rev. 02 — 1 February 2011

3 of 13

NXP Semiconductors

BUK9222-55A

N-channel TrenchMOS logic level FET

4.

Limiting values

[1]

peak drain current is limited by chip, not package.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

55

V

VDGR

drain-gate voltage

RGS =20kΩ

-55

V

VGS

gate-source voltage

-15

15

V

ID

drain current

Tmb =25°C; VGS =5V; see Figure 1;

see Figure 3

-48

A

Tmb =100 °C; VGS =5V; see Figure 1

-34

A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs;

see Figure 3

[1]

-

193

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-

103

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

IS

source current

Tmb =25°C

-

48

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

193

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

ID =48A; Vsup ≤ 55 V; RGS =50 Ω;

VGS =5V; Tj(init) =25°C; nk;

unclamped

-

160

mJ

Fig 1.

Normalized continuous drain current as a

function of mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Tmb (°C)

0

200

150

50

100

03aa24

40

80

120

Ider

(%)

0

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

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