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2SD879G-T92-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SD879G-T92-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SD879 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R208-010.C ABSOLUTE MAXIMUM RATING ( T A=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEX 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Dissipation PD 1 W Collector Current (DC) IC 3 A Collector Current (PULSE) ICP 5 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Pulse Condition -> 100 ms single pulse 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Voltage VCBO IC=10uA, IE=0 30 V Collector-Emitter Voltage VCEX IC=1mA, VBE=3V 20 V Collector-Emitter Voltage VCEO IC=1mA, RBE= 10 V Emitter-Base Voltage VEBO IE=10uA, IC=0 6 V Base-Emitter Voltage VBE VCE=-1V,IC=-2A 0.83 1.5 V Collector Cut-Off Current ICBO VCB=20V, IE=0 1 A Emitter Cut-Off Current IEBO VEB=4V, IC=0 1 A DC Current Gain hFE VCE=2V, IC=3A (pulse) 140 210 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB=60mA (pulse) 0.3 0.4 V Current Gain Bandwidth Product fT VCE=10V, IC=50mA 200 MHz Output Capacitance COB VCB=10V, f=1MHz 30 pF Pulse: 1mS |
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