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BU941ZL-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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BU941ZL-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page BU941Z NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R214-022.E ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Peak Current ICM 30 A Base Current IB 1 A Base Peak Current IBM 5 W TO-3P 155 W Total Power Dissipation (TC=25C) TO-220/TO263 PD 150 W Junction Temperature TJ +175 C Storage Temperature TSTG -65 ~ +175 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Clamping Voltage VCL* IC=10mA 350 500 V VCE=300V 100 μA Collector Cut-Off Current ICEO VCE=300V, TJ=125C 0.5 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 20 mA IC=8A, IB=100mA 1.6 IC=10A, IB=250mA 1.8 Collector-Emitter Saturation Voltage VCE(SAT)* IC=12A, IB=300mA 2 V IC=8A, IB=100mA 2.2 IC=10A, IB=250mA 2.5 Base-Emitter Saturation Voltage VBE(SAT)* IC=12A, IB=300mA 2.7 V DC Current Gain hFE* VCE=10V, IC=5A 300 Diode Forward Voltage VF IF=10A 2.5 V Functional Test VCC=24V, VCLAMP=400V, L=7mH (see Functional Test Circuit) 10 A Fall Time tF 0.5 Storage Time tS VCC=12V, VCLAMP=300V, VBE=0, RBE=47Ω, L=7mH, IC=7A, IB=70mA (see Fig.1) 15 μs *Pulsed: Pulse duration=300μs, duty cycle 1.5% |
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