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MJE13003L-H-X-T6C-K Datasheet(PDF) 4 Page - Unisonic Technologies |
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MJE13003L-H-X-T6C-K Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 8 page MJE13003-H NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R223-010.B APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Reverse Bias Safe Operating Area and Inductive Switching Resistive Switching +125V RB D1 -4.0V SCOPE Rc TUT Coil Data : GAP for 30 mH/2 A VCC=20V Ferroxcube core #6656 LCOIL=50mH VCLAMP=300V Full Bobbin ( ~ 200 Turns) #20 VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω Output Waveforms +10.3 V 25μS 0 -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Ic (A) Tc (°C) tsv (μs) tRV (μs) tFI (μs) tTI (μs) tc (μs) 0.5 1 1.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 Table 2. Typical Inductive Switching Performance Note: All Data Recorded in the Inductive Switching Circuit in Table 1 Time ICPK 90% Vclamp IC tsv tRV tFI tTI VCLAMP 10% VCLAMP tc 90% Ic 2% Ic 10% ICPK VCE IB 90% IB1 Fig.1 Inductive Switching Measurements |
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