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28C64AFT-20IL Datasheet(PDF) 1 Page - Microchip Technology |
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28C64AFT-20IL Datasheet(HTML) 1 Page - Microchip Technology |
1 / 8 page © 1996 Microchip Technology Inc. DS11109H-page 1 FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches • Data Polling • Ready/Busy • Chip Clear Operation • Enhanced Data Protection -VCC Detector - Pulse Filter - Write Inhibit • Electronic Signature for Device Identification • 5-Volt-Only Operation • Organized 8Kx8 JEDEC Standard Pinout - 28-pin Dual-In-Line Package - 32-pin PLCC Package - 28-pin Thin Small Outline Package (TSOP) 8x20mm - 28-pin Very Small Outline Package (VSOP) 8x13.4mm • Available for Extended Temperature Ranges: - Commercial: 0˚C to +70˚C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non- volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched internally, freeing the micropro- cessor address and data bus for other operations. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. To determine when the write cycle is complete, the user has a choice of monitoring the Ready/ Busy output or using Data polling. The Ready/Busy pin is an open drain output, which allows easy configuration in wired- or systems. Alternatively, Data polling allows the user to read the location last written to when the write operation is com- plete. CMOS design and processing enables this part to be used in systems where reduced power consumption and reli- ability are required. A complete family of packages is offered to provide the utmost flexibility in applications PACKAGE TYPES BLOCK DIAGRAM A10 CE 21 20 19 VSS I/O2 14 13 12 OE A11 A9 A8 22 23 24 RDY/BSY A12 A7 1 2 3 4 5 25 26 27 28 6 7 NC WE VCC A6 A5 A4 A3 I/O7 I/O6 I/O5 I/O4 I/O3 I/O1 I/O0 A0 A1 A2 18 17 16 15 11 10 9 8 OE A11 A9 A8 NC WE Vcc RDY/BSY A12 A7 A6 A5 A4 A3 A10 CE I/07 I/06 I/05 I/04 I/03 Vss I/02 I/01 I/00 A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 • Pin 1 indicator on PLCC on top of package • 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 RDY/BSY A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 V Vcc WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 SS A6 A5 A4 A3 A2 A1 A0 NC I/O0 A8 A9 A11 NC OE A10 CE I/O7 I/O6 29 28 27 26 25 24 23 22 21 5 6 7 8 9 10 11 12 13 I/O0 I/O7 Input/Output Buffers Chip Enable/ Output Enable Control Logic CE OE Data Protection Circuitry A12 Y Gating 16K bit Cell Matrix X Decoder Y Decoder A0 Data Poll Auto Erase/Write Timing VCC VSS WE L a t c h e s Program Voltage Generation Rdy/ Busy 28C64A 64K (8K x 8) CMOS EEPROM This document was created with FrameMaker404 |
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