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BUK9660-100A Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9660-100A Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BUK9660-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 16 February 2011 7 of 13 NXP Semiconductors BUK9660-100A N-channel TrenchMOS logic level FET Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 10. Gate-source voltage as a function of turn-on gate charge; typical values Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03nc71 0 10 20 30 40 50 01 23 4 VGS (V) ID (A) Tj = 25 °C Tj = 175 °C 03nc69 0 1 2 3 4 5 010 20 30 40 QG (nC) VGS (V) VDD = 80 V VDD = 14 V 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 03nc74 0 20 40 60 80 100 120 140 0 20406080 ID (A) RDSon (m Ω) 3 3.2 3.4 3.6 45 3.8 VGS (V) = |
Similar Part No. - BUK9660-100A_15 |
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Similar Description - BUK9660-100A_15 |
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