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93LC86-ISN Datasheet(PDF) 1 Page - Microchip Technology |
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93LC86-ISN Datasheet(HTML) 1 Page - Microchip Technology |
1 / 12 page © 1996 Microchip Technology Inc. Preliminary DS21131C-page 1 FEATURES • Single supply with programming operation down to 2.5V • Low power CMOS technology - 1 mA active current typical -5 µA standby current (typical) at 3.0V • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization (93LC76) 2048 x 8 or 1024 x 16 bit organization (93LC86) • Self-timed ERASE and WRITE cycles (including auto-erase) • Automatic ERAL before WRAL • Power on/off data protection circuitry • Industry standard 3-wire serial I/O • Device status signal during ERASE/WRITE cycles • Sequential READ function • 10,000,000 ERASE/WRITE cycles guaranteed • Data retention > 200 years • 8-pin PDIP/SOIC package • Temperature ranges available DESCRIPTION The Microchip Technology Inc. 93LC76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93LC76/86 is available in standard 8-pin DIP and 8-pin surface mount SOIC packages. - Commercial (C) 0 °C to +70°C - Industrial (I) -40 °C to +85°C PACKAGE TYPES BLOCK DIAGRAM SOIC Package DIP Package CS CLK DI DO VSS PE VCC ORG CS CLK DI DO VCC PE ORG VSS 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 DO CS CLK VCC VSS Memory Array Address Decoder Data Register Counter Address Output Buffer Mode Decode Logic Generator Clock DI PE 93LC76/86 8K/16K 2.5V Microwire® Serial EEPROM Microwire is a registered trademark of National Semiconductor Incorporated. This document was created with FrameMaker404 |
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