© 1996 Microchip Technology Inc.

DS21109E-page 7

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TABLE 11-4:

DC PROGRAMMING SPECIFICATIONS

TABLE 11-5:

AC PROGRAMMING SPECIFICATIONS (SEE NOTE 2)

Symbol

Parameter

Ambient Temperature: Tamb = 25

°C ±5°C

Limits

Units

Min.

Max.

Supply voltage during programming

5.0

6.0

V

Low-level input voltage

0.0

0.5

V

High-level input voltage

2.4

V

Low-level output voltage

—

0.4

V

High-level output voltage

3.7

—

V

Programming voltage*

12.5

13.5

V

Programming Mode access voltage

V

Supply current in Programming Mode

—

100

mA

Input or output leakage current

-10

10

µA

First pass Low-level supply voltage for final verification

2.8

3.0

V

Second pass High-level supply voltage for final verification

6.4

6.6

V

* No overshoot is permitted on this signal. VPP must not be allowed to exceed 14 volts.

Symbol

Parameter

Limits

Units

Conditions

Min.

Max.

1

µs

Note 1

1

µs

Note 1

.50

1.05

ms

100

ns

Note 1

CE Setup to CLK for Entering Programming Mode

100

ns

Note 1

OE Setup to CLK for Entering Programming Mode

100

ns

Note 1

300

ns

Note 1

Data Setup to CLK for Programming

50

ns

Data Hold from CLK for Programming

0

ns

CE Low time to clear data latches

100

ns

CE Setup to CLK for Programming/Verifying

100

ns

OE Setup to CLK for Incrementing Address Counter

100

ns

OE Hold from CLK for Incrementing Address Counter

0

ns

200

ns

Note 1

CLK to Data Valid

400

ns

Data Hold from CLK

0

ns

CE Low to Data Valid

250

ns

Note 1: This parameter is periodically sampled and not 100% tested.

Note 2: While in Programming Mode, CE should only be changed while OE is HIGH and has been HIGH for 200 ns,

and OE should only be changed while CE is HIGH and has been HIGH for 200 ns.