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UG5N120L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UG5N120L-TA3-T
Description  NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UG5N120L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies

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UG5N120
Preliminary
Insulated Gate Bipolar Transistor
UNISONIC TECHNOLOGIES CO.,LTD
2 of 3
www.unisonic.com.tw
QW-R207-029.a
ABSOLUTE MAXIMUM RATING (T
C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Voltage
BVCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Collector Current Continuous
TC=25°C
IC
21
A
TC=110°C
10
A
Collector Current Pulsed (Note 1)
ICM
40
A
Power Dissipation Total at TC=25°C
PD
167
W
Power Dissipation Derating TC>25°C
1.33
W/°C
Short Circuit Withstand Time (Note 2) at VGE=15V
tSC
8
µs
Short Circuit Withstand Time (Note 2) at VGE=12V
tSC
15
µs
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=10A, L=400µH, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=25
Ω.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
0.75
°C/W
ELECTRICAL CHARACTERISTICS (T
C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to Emitter Breakdown Voltage
BVCES
IC=250µA, VGE=0V
1200
V
Collector to Emitter Leakage Current
ICES
VCE=1200V
TC=25°C
250
µA
TC=125°C
100
µA
TC=150°C
1.5
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC=5A, VGE=15V
TC=25°C
2.45
2.7
V
TC=150°C
3.7
4.2
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC=45µA, VCE=VGE
6.0
6.8
V
Gate to Emitter Leakage Current
IGES
VGE=±20V
±250
nA
Switching SOA
SSOA
TJ=150°C, RG=25
Ω, VGE=15V,
L=5mH, VCE(PK)=1200V
30
A
Gate to Emitter Plateau Voltage
VGEP
IC=5A, VCE=600V
10.5
V
On-State Gate Charge
QG(ON)
IC=5A, VCE=600V
VGE=15V
53
65
nC
VGE=20V
60
72
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ=25°C
ICE=1.0A, VCE=30V, VGE=15V,
RG=25
220
ns
Current Rise Time
trl
360
ns
Current Turn-Off Delay Time
td(OFF)I
320
ns
Current Fall Time
tfl
120
ns


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