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UG5N120L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UG5N120L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UG5N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO.,LTD 2 of 3 www.unisonic.com.tw QW-R207-029.a ABSOLUTE MAXIMUM RATING (T C =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Voltage BVCES 1200 V Gate-Emitter Voltage VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Collector Current Continuous TC=25°C IC 21 A TC=110°C 10 A Collector Current Pulsed (Note 1) ICM 40 A Power Dissipation Total at TC=25°C PD 167 W Power Dissipation Derating TC>25°C 1.33 W/°C Short Circuit Withstand Time (Note 2) at VGE=15V tSC 8 µs Short Circuit Withstand Time (Note 2) at VGE=12V tSC 15 µs Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. ICE=10A, L=400µH, TJ=25°C. 4. VCE(PK)=840V, TJ=125°C, RG=25 Ω. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 0.75 °C/W ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BVCES IC=250µA, VGE=0V 1200 V Collector to Emitter Leakage Current ICES VCE=1200V TC=25°C 250 µA TC=125°C 100 µA TC=150°C 1.5 mA Collector to Emitter Saturation Voltage VCE(SAT) IC=5A, VGE=15V TC=25°C 2.45 2.7 V TC=150°C 3.7 4.2 V Gate to Emitter Threshold Voltage VGE(TH) IC=45µA, VCE=VGE 6.0 6.8 V Gate to Emitter Leakage Current IGES VGE=±20V ±250 nA Switching SOA SSOA TJ=150°C, RG=25 Ω, VGE=15V, L=5mH, VCE(PK)=1200V 30 A Gate to Emitter Plateau Voltage VGEP IC=5A, VCE=600V 10.5 V On-State Gate Charge QG(ON) IC=5A, VCE=600V VGE=15V 53 65 nC VGE=20V 60 72 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ=25°C ICE=1.0A, VCE=30V, VGE=15V, RG=25 Ω 220 ns Current Rise Time trl 360 ns Current Turn-Off Delay Time td(OFF)I 320 ns Current Fall Time tfl 120 ns |
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