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UG25N120G-T47-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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UG25N120G-T47-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R203-050.a 1200V NPT TRENCH IGBT DESCRIPTION The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UG25N120 is suitable for the resonant or soft switching applications. FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C SYMBOL TO-220 1 TO-247 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UG25N120L-TA3-T UG25N120G-TA3-T TO-220 G C E Tube UG25N120L-T47-T UG25N120G-T47-T TO-247 G C E Tube Note: Pin Assignment: G: Gate C: Collector E: Emitte UG25N120L-TA3-T (1)Packing Type (2)Package Type (1) T: Tube (2) TA3: TO-220, T47: TO-247 (3) L: Lead Free, G: Halogen Free (3)Lead Free MARKING |
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