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UT8205AG-AG6-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT8205AG-AG6-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 3 page UT8205A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R502-287.C TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 0 Drain-Source Breakdown Voltage, BVDSS(V) 10 20 30 0 5 15 25 50 100 150 200 250 300 0.2 0 0 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 0.6 1.0 100 150 200 0.4 0.8 1.2 50 250 300 0 Source to Drain Voltage, VSD (V) 0 0.2 0.6 0.4 0.8 0.4 0.8 1.2 1.6 2.0 0 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 50 100 150 200 0 250 1 2 3 4 5 6 7 300 VGS=2.5V ID=5.2A VGS=4.5V ID=6A Drain Current vs. Source to Drain Voltage 1.0 0.2 0.6 1.0 1.4 1.8 |
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