1

DATASHEET

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

X28HC256

The X28HC256 is a second generation high performance

CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s

proprietary, textured poly floating gate technology, providing a

highly reliable 5V only nonvolatile memory.

The X28HC256 supports a 128-byte page write operation,

effectively providing a 24µs/byte write cycle, and enabling the

entire memory to be typically rewritten in less than 0.8s. The

X28HC256 also features DATA polling and Toggle bit polling,

two methods of providing early end of write detection. The

X28HC256 also supports the JEDEC standard software data

protection feature for protecting against inadvertent writes

during power-up and power-down.

Endurance for the X28HC256 is specified as a minimum

100,000 write cycles per byte and an inherent data retention

of 100 years.

Features

• Access time: 90ns

• Simple byte and page write

-Single 5V supply

-Self timed

- No erase before write

- No complex programming algorithms

- No overerase problem

•Low power CMOS

- Active: 60mA

- Standby: 500µA

• Software data protection

- Protects data against system level inadvertent writes

• High speed page write capability

- Endurance: 100,000 cycles

- Data retention: 100 years

• Early end of write detection

-DATA polling

- Toggle bit polling

• RoHS compliant

X BUFFERS

LATCHES AND

DECODER

I/O BUFFERS

AND LATCHES

Y BUFFERS

LATCHES AND

DECODER

CONTROL

LOGIC AND

TIMING

256k BIT

EEPROM

ARRAY

DATA INPUTS/OUTPUTS

CE

OE

WE

ADDRESS

INPUTS

FIGURE 1. BLOCK DIAGRAM

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

August 27, 2015

FN8108.5