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27C16AT-20IVS Datasheet(PDF) 6 Page - Microchip Technology |
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27C16AT-20IVS Datasheet(HTML) 6 Page - Microchip Technology |
6 / 8 page 28C16A DS11125G-page 6 © 1996 Microchip Technology Inc. 2.0 DEVICE OPERATION The Microchip Technology Inc. 28C16A has four basic modes of operation—read, standby, write inhibit, and byte write—as outlined in the following table. 2.1 Read Mode The 28C16A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and is used to gate data to the output pins independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the output tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC-tOE. 2.2 Standby Mode The 28C16A is placed in the standby mode by applying a high signal to the CE input. When in the standby mode, the outputs are in a high impedance state, inde- pendent of the OE input. 2.3 Data Protection In order to ensure data integrity, especially during criti- cal power-up and power-down transitions, the following enhanced data protection circuits are incorporated: First, an internal VCC detect (3.3 volts typical) will inhibit the initiation of non-volatile programming operation when VCC is less than the VCC detect circuit trip. Second, there is a WE filtering circuit that prevents WE pulses of less than 10 ns duration from initiating a write cycle. Third, holding WE or CE high or OE low, inhibits a write cycle during power-on and power-off (VCC). Operation Mode CE OE WE I/O Read L L H DOUT Standby H X X High Z Write Inhibit H X X High Z Write Inhibit X L X High Z Write Inhibit X X H High Z Byte Write L H L DIN Byte Clear Automatic Before Each “Write” X = Any TTL level. 2.4 Write Mode The 28C16A has a write cycle similar to that of a Static RAM. The write cycle is completely self-timed and ini- tiated by a low going pulse on the WE pin. On the fall- ing edge of WE, the address information is latched. On rising edge, the data and the control pins (CE and OE) are latched. 2.5 Data Polling The 28C16A features Data polling to signal the com- pletion of a byte write cycle. During a write cycle, an attempted read of the last byte written results in the data complement of I/O7 (I/O0 to I/O6 are indetermin- able). After completion of the write cycle, true data is available. Data polling allows a simple read/compare operation to determine the status of the chip eliminat- ing the need for external hardware. 2.6 Electronic Signature for Device Identification An extra row of 32 bytes of EEPROM memory is avail- able to the user for device identification. By raising A9 to 12V ±0.5V and using address locations 7EO to 7FF, the additional bytes can be written to or read from in the same manner as the regular memory array. 2.7 Chip Clear All data may be cleared to 1's in a chip clear cycle by raising OE to 12 volts and bringing the WE and CE low. This procedure clears all data, except for the extra row. |
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