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LP2989IM-1.8 Datasheet(PDF) 4 Page - Texas Instruments |
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LP2989IM-1.8 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 26 page LP2989LV SNVS086K – MAY 2000 – REVISED JULY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings If Military/Aerospace specified devices are required contact the Texas Instruments Sales Office/Distributors for availability and specifications. (1) MIN MAX UNIT Operating junction temperature –40 125 °C Power dissipation(2) Internally limited Input supply voltage, survival –0.3 16 V SENSE pin –0.3 6 V Output voltage, survival(3) –0.3 16 V IOUT, Survival Short-circuit protected Input-output voltage, survival(4) –0.3 16 V Storage temperature range, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, RθJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: P(MAX) = (TJ(MAX) – TA) / RθJA. The value RθJA for the WSON (NGN) package is specifically dependent on PCB trace area, trace material, and the number of layers and thermal vias. For improved thermal resistance and power dissipation for the WSON package, refer to Application Note AN-1187 Leadless Leadframe Package (LLP) (SNOA401). Exceeding the maximum allowable power dissipation causes excessive die temperature, and the regulator goes into thermal shutdown. (3) If used in a dual-supply system where the regulator load is returned to a negative supply, the LP2989LV output must be diode-clamped to ground. (4) The output PNP structure contains a diode between the IN and OUT pins that is normally reverse-biased. Forcing the output above the input turns on this diode and may induce a latch-up mode which can damage the part. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Operating junction temperature –40 125 °C Operating input supply voltage 2.1 16 V 6.4 Thermal Information LP2989LV THERMAL METRIC(1) NGN (WSON) D (SOIC) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance, High-K 34.8 114.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 28.4 61.1 °C/W RθJB Junction-to-board thermal resistance 12.0 55.6 °C/W ψJT Junction-to-top characterization parameter 0.2 9.7 °C/W ψJB Junction-to-board characterization parameter 12.2 54.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.3 n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated Product Folder Links: LP2989LV |
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