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LP3852ES-3.3 Datasheet(PDF) 5 Page - Texas Instruments

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Part # LP3852ES-3.3
Description  1.5-A Fast Response Ultra-Low Dropout Linear Regulators
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LP3852ES-3.3 Datasheet(HTML) 5 Page - Texas Instruments

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LP3852, LP3855
www.ti.com
SNVS174I – FEBRUARY 2003 – REVISED FEBRUARY 2015
8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Lead temperature (soldering, 5 sec.)
260
°C
Power dissipation(2)
Internally limited
Input supply voltage (survival)
–0.3
7.5
Shutdown input voltage (survival)
–0.3
7.5
V
Output voltage (survival)(3), (4)
–0.3
6
IOUT (survival)
Short-circuit protected
Maximum voltage for ERROR pin
VIN
Maximum voltage for SENSE pin
VOUT
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
At elevated temperatures, devices must be derated based on package thermal resistance. The devices in TO-220 package must be
derated at RθJA = 32°C/W (with 0.5 in
2, 1-oz. copper area), junction-to-ambient (with no heat sink). The devices in the TO-263 surface-
mount package must be derated at RθJA = 40.3°C/W (with 0.5 in
2, 1-oz. copper area), junction-to-ambient. See Application and
Implementation section.
(3)
If used in a dual-supply system where the regulator load is returned to a negative supply, the output must be diode-clamped to ground.
(4)
The output PMOS structure contains a diode between the IN and OUT terminals. This diode is normally reverse biased. This diode will
get forward biased if the voltage at the output terminal is forced to be higher than the voltage at the input terminal. This diode can
typically withstand 200 mA of DC current and 1 A of peak current.
8.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Input supply voltage(1)
2.5
7
V
Shutdown input voltage
−0.3
7
Maximum operating current (DC)
1.5
A
Junction temperature
−40
125
°C
(1)
The minimum operating value for VIN is equal to either [VOUT(NOM) + VDROPOUT] or 2.5 V, whichever is greater.
8.4 Thermal Information
LP3852/LP3855
THERMAL METRIC(1)
NDC
KTT
NDH
UNIT
5 PINS
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance, High-K
65.2
40.3
32
RθJC(top)
Junction-to-case (top) thermal resistance
47.2
43.4
43.8
RθJB
Junction-to-board thermal resistance
9.9
23.1
18.6
°C/W
ψJT
Junction-to-top characterization parameter
3.4
11.5
8.8
ψJB
Junction-to-board characterization parameter
9.7
22
18
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
1
1.2
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2003–2015, Texas Instruments Incorporated
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