BTA204-600F datasheet(7/13 Pages) PHILIPS

Part #	BTA204-600F

Description	3Q Hi-Com Triac

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NXP Semiconductors

BTA204-600F

3Q Hi-Com Triac

BTA204-600F

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Product data sheet

8 August 2014

7 / 13

9. Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

-

25

mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

-

25

mA

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

-

25

mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

-

20

mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

-

30

mA

IL

latching current

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

-

20

mA

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 9

-

20

mA

VT

on-state voltage

IT = 5 A; Tj = 25 °C; Fig. 10

-

1.4

1.7

V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

-

0.7

1

V

VGT

gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25

0.4

-

V

ID

off-state current

VD = 600 V; Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

50

-

V/µs

VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;

dVcom/dt = 10 V/µs; gate open circuit

3

-

A/ms

dIcom/dt

rate of change of

commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;

dVcom/dt = 0.1 V/µs; gate open circuit

15

-

A/ms

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