BSC117N08NS5 datasheet(6/12 Pages) INFINEON

Part #	BSC117N08NS5

Description	Superior thermal resistance

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Manufacturer	INFINEON [Infineon Technologies AG]

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6

OptiMOSTM5Power-Transistor,80V

BSC117N08NS5

Rev.2.0,2014-12-17

Final Data Sheet

Table6Gatechargecharacteristics1)

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

5

-

nC

VDD=40V,ID=25A,VGS=0to10V

Gate charge at threshold

Qg(th)

-

3

-

nC

VDD=40V,ID=25A,VGS=0to10V

Gate to drain charge

2)

Qgd

-

3

5

nC

VDD=40V,ID=25A,VGS=0to10V

Switching charge

Qsw

-

6

-

nC

VDD=40V,ID=25A,VGS=0to10V

Gate charge total

2)

Qg

-

15

18

nC

VDD=40V,ID=25A,VGS=0to10V

Gate plateau voltage

Vplateau

-

5.0

-

V

VDD=40V,ID=25A,VGS=0to10V

Gate charge total, sync. FET

Qg(sync)

-

13

-

nC

VDS=0.1V,VGS=0to10V

Output charge

2)

Qoss

-

19

25

nC

VDD=40V,VGS=0V

Table7Reversediode

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Diode continuous forward current

IS

-

45

A

TC=25°C

Diode pulse current

IS,pulse

-

196

A

TC=25°C

Diode forward voltage

VSD

-

0.9

1.1

V

VGS=0V,IF=25A,Tj=25°C

Reverse recovery time

2)

trr

-

37

73

ns

VR=40V,IF=25A,diF/dt=100A/µs

Reverse recovery charge

2)

Qrr

-

45

90

nC

VR=40V,IF=25A,diF/dt=100A/µs

1) See

″Gate charge waveforms″ for parameter definition

2) Defined by design. Not subject to production test.

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