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BSL303SPE Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSL303SPE Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page BSL303SPE OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100% Lead-free; RoHS compliant, halogen free Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C -6.3 A T A=70 °C -5.0 Pulsed drain current I D,pulse T A=25 °C -25.2 Avalanche energy, single pulse E AS I D=-6.3A, R GS=25 30.0 mJ Reverse diode dv /dt dv /dt I D=-6.3 A, V DS=-15 V, di /dt =100 A/µs, T j,max=150 °C 6kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 2 (2KV to 4kV) V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 2.0 PG-TSOP-6 V DS -30 V R DS(on),max V GS=-10 V 33 m V GS=-4.5 V 52 I D -6.3 A Product Summary 5 6 1 2 3 4 Type Package Tape and Reel Information Marking Hal. Free Packing BSL303SPE PG-TSOP-6 H6327: 3000 pcs/ reel sPV Yes Non dry Rev 2.0 page 1 2014-11-18 |
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