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IKZ75N65EL5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IKZ75N65EL5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 16 page 2 IKZ75N65EL5 LowVCE(sat)seriesfifthgeneration Rev.2.1,2014-12-10 LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.infineon.com/igbt/ Applications: •Uninterruptiblepowersupplies •Solarphotovoltaicinverters •Weldingmachines Packagepindefinition: •PinC&backside-collector •PinE-emitter •PinK-Kelvinemitter •PinG-gate Pleasenote:TheemitterandKelvinemitterpinsarenot exchangeable.Theirexchangemightleadtomalfunction. KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKZ75N65EL5 650V 75A 1.1V 175°C K75EEL5 PG-TO247-4 |
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