PESDXS4UD_SER_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 21 August 2009

3 of 12

NXP Semiconductors

PESDxS4UD series

Quadruple ESD protection diode arrays in a SOT457 package

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1, 3, 4 or 6 to 2 or 5

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1, 3, 4 or 6 to 2 or 5

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak pulse power

[1][2] -

200

W

peak pulse current

[1][2]

PESD3V3S4UD

-

20

A

PESD5V0S4UD

-

20

A

PESD12VS4UD

-

10

A

PESD15VS4UD

-

6

A

PESD24VS4UD

-

4

A

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2]

PESD3V3S4UD

-

30

kV

PESD5V0S4UD

-

30

kV

PESD12VS4UD

-

30

kV

PESD15VS4UD

-

30

kV

PESD24VS4UD

-

23

kV

PESDxS4UD series

HBM MIL-STD-883

-

10

kV

Table 7.

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

HBM MIL-STD-883; class 3

> 10 kV