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15N06G-S08-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # 15N06G-S08-R
Description  N-CHANNEL POWER MOSFET
Download  7 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

15N06G-S08-R Datasheet(HTML) 4 Page - Unisonic Technologies

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15N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-260.F
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
60
V
Drain-Source Leakage Current
IDSS
VDS=Max Rating
250
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±15V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
1
1.7
2.5
V
On State Drain Current
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
15
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=5V, ID=7.5A
75
100
mΩ
Forward Transconductance (Note 1)
gFS
VDS>ID(ON)×RDS(ON)MAX, ID=7.5A
3
5
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
700
950
pF
Output Capacitance
COSS
230
310
pF
Reverse Transfer Capacitance
CRSS
80
110
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=5V, VDD=30V, RG=4.7Ω,
ID=7.5A
15
60
ns
Turn-ON Rise Time
tR
160
200
Turn-OFF Delay Time
tD(OFF)
VGS=10V, VDD=48V, RG=47Ω
ID=15A
52
80
ns
Turn-OFF Fall-Time
tF
100
140
Total Gate Charge
QG
VDD=40V, VGS=5V, ID=15A
18
30
nC
Gate Source Charge
QGS
8
Gate Drain Charge
QGD
9
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
ISD=15 A,VGS=0V(Note 1)
1.5
V
Source-Drain Current
ISD
15
A
Source-Drain Current (Pulse)
ISDM
(Note 2)
60
A
Notes: 1. Pulse width=300μs, duty cycle=1.5%
2. Pulse width limited by safe operating area.


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