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UD606G-S08-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # UD606G-S08-R
Description  DUAL ENHANCEMENT MODE
Download  11 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD606G-S08-R Datasheet(HTML) 4 Page - Unisonic Technologies

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UD606
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 11
www.unisonic.com.tw
QW-R502-169.C
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
40
V
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
2.3
3
V
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=10V, ID=8A
33
mΩ
VGS=4.5V, ID=6A
55
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=20V, f=1MHz
580
pF
Output Capacitance
COSS
100
pF
Reverse Transfer Capacitance
CRSS
87
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDS=20V, VGS=10V, RG=3Ω
ID=1A
30
ns
Turn-ON Rise Time
tR
30
ns
Turn-OFF Delay Time
tD(OFF)
140
ns
Turn-OFF Fall Time
tF
70
ns
Total Gate Charge (Note2)
QG
VDS=20V, VGS=10V, ID=8A
85
nC
Gate-Source Charge
QGS
9
nC
Gate-Drain Charge
QGD
7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
0.76
1
V
Diode Continuous Forward Current
IS
8
A
Reverse Recovery Time
tRR
IF=8A, dI/dt=100A/μs
22.9
ns
Reverse Recovery Charge
QRR
18.3
nC


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