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80N08G-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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80N08G-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 80N08 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-468.F ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current IDM 320 A Avalanche Energy, Single Pulse EAS 810 mJ Power Dissipation TO-247 PD 300 W TO-220/TO-263 250 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-247 θJA 30 °C/W TO-220/TO-263 62 Junction to Case TO-247 θJC 0.42 °C/W TO-220/TO-263 0.5 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=1mA, VGS=0V 80 V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ=25°C 0.01 1 µA Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±1 ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.1 3.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A 12 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 4700 pF Output Capacitance COSS 1260 pF Reverse Transfer Capacitance CRSS 580 pF SWITCHING PARAMETERS Total Gate Charge QG 144 180 nC Gate to Source Charge QGS 25 37 nC Gate to Drain Charge QGD 69 116 nC Turn-ON Delay Time tD(ON) VDD=40V, RG=2.2Ω ID=80A, VGS=10V 26 ns Rise Time tR 50 ns Turn-OFF Delay Time tD(OFF) 61 ns Fall-Time tF 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 80 A Pulsed Current ISM 320 Drain-Source Diode Forward Voltage VSD ISD=80A 0.9 1.3 V Reverse Recovery Time tRR IF= IS, dIF/dt=100A/µs VR=40V 110 140 ns Reverse Recovery Charge QRR 470 590 nC Note: 1. Defined by design. Not subject to production test. 2. Qualified at -20V and +20V. |
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