UF740

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-078. G



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Drain to Source Breakdown Voltage

= 250μA

400

V

Gate to Threshold Voltage

= 250μA

2.0

4.0

V

On-State Drain Current (Note 1)

10

A

Zero Gate Voltage Drain Current

25

μA

250

μA

Gate to Source Leakage Current

±500

nA

Drain to Source On Resistance

0.38

0.55

Ω

Forward Transconductance

5.8

8.9

S

Turn-On Delay Time

≈ 10A,

MOSFET Switching Times are Essentially

Independent of Operating Temperature

65

75

ns

Rise Time

130

145

ns

Turn-Off Delay Time

240

260

ns

Fall Time

145

155

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate Charge is Essentially Independent of

Operating Temperature

138

nC

Gate to Source Charge

35

nC

Gate to Drain “Miller” Charge

35

nC

Input Capacitance

1170

pF

Output Capacitance

160

pF

Reverse - Transfer Capacitance

26

pF

Internal Drain Inductance

Measured From

the Contact Screw

on Tab to Center

of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

G

S

D

3.5

nH

Measured From

the Drain Lead,

6mm (0.25in)

From Package to

Center of Die

4.5

nH

Internal Source Inductance

Measured From

the Source Lead,

6mm (0.25in)

From Header to

Source Bonding

Pad

7.5

nH

SOURCE TO DRAIN DIODE SPECIFICATIONS

Source to Drain Diode Voltage

2.0

V

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing

the Integral

Reverse P-N

Junction Diode

G

S

D

10

A

Pulse Source to Drain Current

(Note 2)

40

A

Reverse Recovery Time

/dt = 100A/μs

170

390

790

ns

Reverse Recovery Charge

/dt = 100A/μs

1.6

4.5

8.2

μC

Notes: 1. Pulse Test: Pulse width

≤ 300μs, Duty Cycle≤2%.

2. Repetitive rating: Pulse width limited by maximum junction temperature.