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UF630L-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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UF630L-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 8 page  UF630 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R502-049.J ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 200 V On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V 9 A Drain-Source Leakage Current IDSS VDS = Rated BVDSS, VGS = 0V 10 μA Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250μA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A 0.25 0.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 600 pF Output Capacitance COSS 250 pF Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1.0MHz 80 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 30 ns Turn-On Rise Time tR 50 ns Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω (Note 1, 2) 40 ns Total Gate Charge QG 19 30 nC Gate-Source Charge QGS 10 nC Gate-Drain Charge QGD VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA 9 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS =0V, IS = 9.0A 2 V Maximum Continuous Drain-Source Diode Forward Current IS 9 A Maximum Pulsed Drain-Source Diode Forward Current ISM 36 A Reverse Recovery Time trr 450 ns Reverse Recovery Charge QRR IS = 9.0A, dIS/dt = 100A/μs (Note 1) 3 μC Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%. Notes: 2. Essentially independent of operating temperature. |
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