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UF830L-TF2-T Datasheet(PDF) 7 Page - Unisonic Technologies |
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UF830L-TF2-T Datasheet(HTML) 7 Page - Unisonic Technologies |
7 / 9 page UF830 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 9 www.unisonic.com.tw QW-R502-046.I TYPICAL CHARACTERISTICS 0 Case Temperature, TC (°C) 50 100 150 1.2 Normalized Power Dissipation vs. Case Temperature 1.0 0.6 0.2 0 0.4 0.8 Case Temperature,TC (°C) 75 100 150 Maximum Contionuous Drain Current vs. Case Temperature 0 125 50 25 1 2 3 4 5 0.01 Rectangular Pulse Duration, t1 (s) Normalized Maximum Transient Thermal Impedance 1 10-5 10-4 10-3 10-2 10-1 10 Single pulse 0.2 0.1 0.01 0.1 1 PDM t1 t2 0.05 0.02 0.5 100 10 0.1 Drain to Source Voltage, VDS (V) Forward Bias Safe Operating Area 102 10 1 1 1ms 103 Operation in This Region is Limited by rDS (on) 10 0m s 10m s 10μ s TC=25°C TJ=Max Rated Single Pulse 100μ s DC Drain to Source Voltage, VDS (V) 100 150 300 Output Characteristics 0 250 50 0 1 3 4 5 6 VGS=10V VGS=5.5V VGS=4.0V VGS=4.5V VGS=5.0V Pulse Duration=80μs Duty Cycle = 0.5% Max 200 2 Drain to Source Voltage, VDS (V) 4 6 10 Saturation Characteristics 0 8 2 0 1 2 3 4 5 VGS=10V VGS=5.5V VGS=5.0V VGS=4.5V VGS=4.0V Pulse Duration=80μs Duty Cycle = 0.5% Max *Notes: Duty Factor, D=t1/t2 Peak TJ =PDM×ZθJC×RθJC +TC |
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